STM32L433CB datasheet(95/225 Pages) STMICROELECTRONICS

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DS11449 Rev 5

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STM32L433xx

Electrical characteristics

193

6.3.2

Operating conditions at power-up / power-down

The parameters given in Table 23 are derived from tests performed under the ambient

temperature condition summarized in Table 22.

Power dissipation at

TA = 125 °C for suffix 3(4)

LQFP100

119

LQFP64

111

LQFP48

UFBGA100

UFBGA64

UFQFPN48

151

WLCSP64

109

WLCSP49

104

Ambient temperature for the

suffix 6 version

Maximum power dissipation

–40

°C

Low-power dissipation(5)

–40

105

Ambient temperature for the

suffix 7 version

Maximum power dissipation

–40

105

Low-power dissipation(5)

–40

125

Ambient temperature for the

suffix 3 version

Maximum power dissipation

–40

125

Low-power dissipation(5)

–40

130

Junction temperature range

Suffix 6 version

–40

105

°C

Suffix 7 version

–40

125

Suffix 3 version

–40

130

1. When RESET is released functionality is guaranteed down to VBOR0 Min.

2. This formula has to be applied only on the power supplies related to the IO structure described by the pin definition table.

Maximum I/O input voltage is the smallest value between Min(VDD, VDDA, VDDUSB, VLCD)+3.6 V and 5.5V.

3. For operation with voltage higher than Min (VDD, VDDA, VDDUSB, VLCD) +0.3 V, the internal Pull-up and Pull-Down resistors

must be disabled.

4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 7.9: Thermal characteristics).

5. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.9:

Thermal characteristics).

Table 22. General operating conditions (continued)

Symbol

Parameter

Conditions

Min

Max

Unit

Table 23. Operating conditions at power-up / power-down

Symbol

Parameter

Conditions

Min

Max

Unit

tVDD

VDD rise time rate

∞

µs/V

VDD fall time rate

∞

tVDDA

VDDA rise time rate

∞

VDDA fall time rate

∞

tVDDUSB

VDDUSB rise time rate

∞

VDDUSB fall time rate

∞

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