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STM32L433CB 데이터시트(PDF) 122 Page - STMicroelectronics |
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STM32L433CB 데이터시트(HTML) 122 Page - STMicroelectronics |
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122 / 225 page ![]() Table 49. Current consumption in VBAT mode Symbol Parameter Conditions TYP MAX(1) Unit -VBAT 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C IDD_VBAT (VBAT) Backup domain supply current RTC disabled 1.8 V 2 12 66 193 540 5 30 165 482 1350 nA 2.4 V 1 12 73 217 600 6 30 182 542 1500 3 V 5 16 92 266 731 12.5 40 230 665 1928 3.6 V 6 30 161 459 1 269 15 75 402 1147 3173 RTC enabled and clocked by LSE bypassed at 32768 Hz 1.8 V 154 175 247 430 - - - - - - 2.4 V 228 246 335 542 - - - - - - 3 V 316 340 459 714 - - - - - - 3.6 V 419 462 684 1 140 - - - - - - RTC enabled and clocked by LSE quartz(2) 1.8 V 256 297 385 558 823 - - - - - 2.4 V 345 381 477 673 906 - - - - - 3 V 455 495 603 836 1 085 - - - - - 3.6 V 591 642 824 1 207 1 733 - - - - - 1. Guaranteed by characterization results, unless otherwise specified. 2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors. |
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