CMBT8550 datasheet(1/3 Pages) CDIL

부품명	CMBT8550

상세설명	PNP SILICON PLANAR EPITAXIAL TRANSISTOR

PDF	3 Pages

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제조업체	CDIL [Continental Device India Limited]

홈페이지	http://www.cdilsemi.com

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PNP SILICON PLANAR EPITAXIAL TRANSISTOR

CMBT8550

SOT-23

Formed SMD Package

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

UNITS

Collector Base Voltage

VCBO

V

Collector Emitter Voltage

VCEO

V

Emitter Base Voltage

VEBO

V

Collector Current Continuous

IC

mA

Collector Dissipation @ Ta=25ºC

PC

mW

Operating and Storage Junction

Temperature Range

Tj, Tstg

ºC

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNITS

Collector Base Voltage

VCBO

IC=100µA, IE=0

30

V

Collector Emitter Voltage

VCEO

IC=10mA, IB=0

25

V

Emitter Base Voltage

VEBO

IE=10µA, IC=0

6

V

Collector Cut off Current

ICBO

VCB=15V, IE=0

50

nA

Emitter Cut off Current

IEBO

VEB=4V, IC=0

500

nA

DC Current Gain

hFE

IC=5mA, VCE=1V

45

*IC=100mA, VCE=1V

100

400

IC=500mA, VCE=1V

40

Collector Emitter Saturation Voltage

VCE(sat)

IC=500mA, IB=50mA

0.5

V

Base Emitter Saturation Voltage

VBE(sat)

IC=500mA, IB=50mA

1.2

V

Transition Frequency

fT

IC=100mA, VCE=10V, f=100MHz

100

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

35

pF

CLASSIFICATIONS

CMBT8550

C

D

E

*hFE

100 - 400

100 - 200

150 - 300

280 - 400

MARKING

55

55C

55D

55E

800

250

- 55 to +125

VALUE

30

25

6

PIN CONFIGURATION (PNP)

1 = BASE

2 = EM ITTER

3 = COLLECTOR

2

1

3

Continental Device India Limited

Data Sheet

Page 1 of 3

Continental Device India Limited

An ISO/TS16949 and ISO 9001 Certified Company

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