 |
전자부품 데이터시트 검색엔진 |
|
|
전자부품 데이터시트 검색엔진 |
|
KMM5324004CSW 데이터시트(PDF) 6 Page - Samsung semiconductor |
|
|
|||||||||||||||||||||||||||||
KMM5324004CSW 데이터시트(HTML) 6 Page - Samsung semiconductor |
|
|
6 / 21 page  DRAM MODULE KMM5324004CSW/CSWG CAPACITANCE (TA = 25 °C, VCC=5V, f = 1MHz) Item Symbol Min Max Unit Input capacitance[A0-A11] Input capacitance[W] Input capacitance[RAS0/RAS2] Input capacitance[CAS0 - CAS3] Input/Output capacitance[DQ0-7, 9-16,18-25, 27-34] CIN1 CIN2 CIN3 CIN4 CDQ - - - - - 20 24 24 17 17 pF pF pF pF pF AC CHARACTERISTICS (0 °C≤TA≤70°C, Vcc=5.0V±10%. See notes 1,2.) Test condition : Vih/Vil=2.6/0.8V, Voh/Vol=2.0/0.8V, output loading CL=100pF Parameter Symbol -5 -6 Unit Note Min Max Min Max Random read or write cycle time tRC 84 104 ns Access time from RAS tRAC 50 60 ns 3,4,10 Access time from CAS tCAC 13 15 ns 3,4,5 Access time from column address tAA 25 30 ns 3,10 CAS to output in Low-Z tCLZ 3 3 ns 3 Output buffer turn-off delay from CAS tCEZ 3 13 3 13 ns 6,12 Transition time(rise and fall) tT 1 50 1 50 ns 2 RAS precharge time tRP 30 40 ns RAS pulse width tRAS 50 10K 60 10K ns RAS hold time tRSH 13 15 ns CAS hold time tCSH 38 45 ns CAS pulse width tCAS 8 10K 10 10K ns 4 RAS to CAS delay time tRCD 20 37 20 45 ns 9 RAS to column address delay time tRAD 15 25 15 30 ns CAS to RAS precharge time tCRP 5 5 ns Row address set-up time tASR 0 0 ns Row address hold time tRAH 10 10 ns Column address set-up time tASC 0 0 ns Column address hold time tCAH 8 10 ns Column address to RAS lead time tRAL 25 30 ns Read command set-up time tRCS 0 0 ns Read command hold referenced to CAS tRCH 0 0 ns 8 Read command hold referenced to RAS tRRH 0 0 ns 8 Write command set-up time tWCS 0 0 ns 7 Write command hold time tWCH 10 10 ns Write command pulse width tWP 10 10 ns Write command to RAS lead time tRWL 13 15 ns Write command to CAS lead time tCWL 8 10 ns Data set-up time tDS 0 0 ns 9 Data hold time tDH 8 10 ns 9 Refresh period tREF 64 64 ms CAS setup time (CAS-before-RAS refresh) tCSR 5 5 ns CAS hold time (CAS-before-RAS refresh) tCHR 10 10 ns RAS to CAS precharge time tRPC 5 5 ns Access time from CAS precharge tCPA 28 35 ns 3 |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Korean ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
