PDTA113EMB datasheet(2/13 Pages) NEXPERIA

부품명	PDTA113EMB

상세설명	PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 1 k廓

PDF	13 Pages

Scroll/Zoom	100%

제조업체	NEXPERIA [Nexperia B.V. All rights reserved]

홈페이지	https://www.nexperia.com/

Logo

2 / 13 page

Product profile

1.1 General description

PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3

(SOT883B) Surface-Mounted Device (SMD) plastic package.

NPN complement: PDTC113EMB.

1.2 Features and benefits

 100 mA output current capability

 Reduces component count

 Built-in bias resistors

 Reduces pick and place costs

 Simplifies circuit design

 AEC-Q101 qualified

 Leadless ultra small SMD plastic

package

 Low package height of 0.37 mm

1.3 Applications

 Low-current peripheral driver

 Control of IC inputs

 Replaces general-purpose transistors

in digital applications

 Mobile applications

1.4 Quick reference data

PDTA113EMB

PNP resistor-equipped transistor; R1 = 1 k

Ω, R2 = 1 kΩ

Rev. 1 — 4 April 2012

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter

voltage

open base

-50

output current

-100

bias resistor 1 (input)

Tamb = 25 °C

0.7

1.3

Ω

R2/R1

bias resistor ratio

0.8

1.2

PDTA113EMB 데이터시트(PDF) 2 Page - Nexperia B.V. All rights reserved

PDTA113EMB 데이터시트(HTML) 2 Page - Nexperia B.V. All rights reserved

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

데이터시트 다운로드

링크 URL