MMBZ16VTAL datasheet(1/12 Pages) NEXPERIA

부품명	MMBZ16VTAL

상세설명	High surge current unidirectional double ESD protection diodes

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MMBZ16VTAL

High surge current unidirectional double ESD protection

diodes

6 November 2017

Product data sheet

1. General description

Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode

configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic

package. The device is designed for ESD and transient overvoltage protection of up to two signal

lines.

2. Features and benefits

• Unidirectional protection of two lines

• Reverse standoff voltage: VRWM = 13 V

• Average measured surge robustness: IPPM = 14 A (8/20 µs) / IPPM = 2.54 A (10/1000 µs)

• Typical reverse leakage current: IRM = 0.1 nA

• Tight breakdown voltage tolerance: ΔVBR +/- 2%

• AEC-Q101 qualified

3. Applications

• Automotive in-vehicle networks protection

• Industrial application

• Power management

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse standoff

voltage

Tj = 25 °C

-

13

V

IPPM

rated peak pulse

current

tp = 10/1000 µs

[1] [2] -

-

1.9

A

VCL

clamping voltage

IPP = 1.7 A; tp = 10/1000 µs; Tj = 25 °C [1] [2] -

19.5

23

V

[1] According to IEC 61643-321.

[2] Measured from pin 1 or 2 to pin 3.

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