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MMBZ10VAL 데이터시트(PDF) 5 Page - Nexperia B.V. All rights reserved |
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MMBZ10VAL 데이터시트(HTML) 5 Page - Nexperia B.V. All rights reserved |
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5 / 18 page ![]() MMBZXAL_SER_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 10 December 2009 4 of 17 NXP Semiconductors MMBZxAL series Low capacitance unidirectional double ESD protection diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per diode PPPM rated peak pulse power tp = 10/1000 μs [1][2] MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL -24 W MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL -40 W IPPM rated peak pulse current tp = 10/1000 μs [1][2] MMBZ5V6AL - 3 A MMBZ6V2AL - 2.76 A MMBZ6V8AL - 2.5 A MMBZ9V1AL - 1.7 A MMBZ10VAL - 1.7 A MMBZ12VAL - 2.35 A MMBZ15VAL - 1.9 A MMBZ18VAL - 1.6 A MMBZ20VAL - 1.4 A MMBZ27VAL - 1 A MMBZ33VAL - 0.87 A Per device Ptot total power dissipation Tamb ≤ 25 °C MMBZxAL series [3] -265 mW MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL [4] -290 mW MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL [4] -360 mW |
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