BC68PAS datasheet(8/14 Pages) NEXPERIA

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BC68PAS_SER

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Product data sheet

Rev. 1 — 19 June 2015

7 of 13

NXP Semiconductors

BC68PAS series

20 V, 2 A NPN medium power transistors

Characteristics

[1]

Pulse test: tp  300 s;   0.02.

Table 7.

Characteristics

Tamb = 25 C unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off current

VCB =25V; IE = 0 A

100

VCB =25V; IE =0A; Tj =150 C

--10

A

IEBO

emitter-base cut-off current

VEB =5 V; IC = 0 A

100

hFE

DC current gain

VCE =10V; IC =5mA

VCE =1V; IC = 500 mA

[1] 85

375

VCE =1V; IC =1A

[1] 60

VCE =1V; IC =2A

[1] 40

hFE selection -25

VCE =1V; IC = 500 mA

[1] 160

375

VCEsat

collector-emitter saturation

voltage

IC =1A; IB =100 mA

[1] --0.5

IC =2A; IB =200 mA

[1] --0.6

VBE

base-emitter voltage

IC =5mA; VCE =10 V

[1] --0.7

IC =1A; VCE =1V

[1] --1

transition frequency

VCE =5V; IC = 50 mA; f = 100 MHz

170

MHz

collector capacitance

VCB =10V; IE = ie =0 A; f = 1 MHz

VCE =1V

(1) Tamb = 100 C

(2) Tamb =25 C

(3) Tamb = 55 C

Tamb = 25 C

Fig 7.

DC current gain as a function of collector

current; typical values

Fig 8.

Collector current as a function of

collector-emitter voltage; typical values

006aac694

200

100

300

400

hFE

IC (A)

10–4

10–3

10–1

10–2

(1)

(2)

(3)

VCE (V)

006aac710

0.8

1.6

2.4

(A)

0.0

IB (mA) = 10

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