MMBTSC2412 datasheet(2/4 Pages) PJSEMI

부품명	MMBTSC2412

상세설명	PNP Transistor

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제조업체	PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]

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Electrical Characteristics

Ratings at 25℃ ambient temperature unless otherwise specified.

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at -VCE = 6 V, -IC = 1 mA

Current Gain Group

HFE

120

180

270

390

Collector Base Cutoff Current

at -VCB = 60 V

-ICBO

100

Emitter Base Cutoff Current

at -VEB = 6 V

-IEBO

100

Emitter Base Breakdown Voltage

at -IE = 50 μA

-V(BR)EBO

Collector Emitter Saturation Voltage

at -IC = 50 mA, -IB = 5 mA

-VCE(sat)

0.5

Base Emitter Saturation Voltage

at -IC = 50 mA, -IB = 5 mA

-VBE(sat)

Transition Frequency

at -VCE = 12 V, -IC = 2 mA, f = 30 MHz

140

MHz

Collector Base Capacitance

at -VCB = 12 V, f = 1 MHz

Cob

Collector Base Breakdown Voltage

at -IC = 50 μA

-V(BR)CBO

-V(BR)CEO

Collector Emitter Breakdown Voltage

at -IC = 1 mA

MMBTSA1037

PNP Transistor

www.pingjingsemi.com

Revision：1.0 Mar-2019

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