13

All data sheets are subject to change without notice

©2001 Maxwell Technologies

All rights reserved.

3.3V 1 Megabit (128K x 8-Bit) EEPROM

28LV010

03.14.03 REV 6

This application note describes the programming procedures for the EEPROM modules and with details of various

techniques to preserve data protection.

Automatic Page Write

Page-mode write feature allows 1 to 128 bytes of data to be written into the EEPROM in a single write cycle, and

allows the undefined data within 128 bytes to be written corresponding to the undefined address (A0 to A6). Loading

the first byte of data, the data load window opens 30 µ s for the second byte. In the same manner each additional byte

of data can be loaded within 30 µ s. In case CE and WE are kept high for 100(s after data input, EEPROM enters

erase and write mode automatically and only the input data are written into the EEPROM.

WE CE Pin Operation

During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the rising edge of

WE or CE.

Data Polling

Data Polling function allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a

write cycle, an inversion of the last byte of data to be loaded outputs from I/O 7 to indicate that the EEPROM is per-

forming a write operation.

RDY/Busy Signal

RDY/Busy signal also allows a comparison operation to determine the status of the EEPROM. The RDY/Busy signal

has high impedance except in write cycle and is lowered to V

the RDY/Busy signal changes state to high impedance.