전자부품 데이터시트 검색엔진
  Korean  ▼
ALLDATASHEET.CO.KR

X  

SI-8090JD 데이터시트(PDF) 6 Page - Allegro MicroSystems

부품명 SI-8090JD
상세설명  Step-Down to 9.0 V, 1.5 A, DC/DC Converter
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
제조업체  ALLEGRO [Allegro MicroSystems]
홈페이지  http://www.allegromicro.com
Logo ALLEGRO - Allegro MicroSystems

SI-8090JD 데이터시트(HTML) 6 Page - Allegro MicroSystems

Back Button SI-8090JD Datasheet HTML 2Page - Allegro MicroSystems SI-8090JD Datasheet HTML 3Page - Allegro MicroSystems SI-8090JD Datasheet HTML 4Page - Allegro MicroSystems SI-8090JD Datasheet HTML 5Page - Allegro MicroSystems SI-8090JD Datasheet HTML 6Page - Allegro MicroSystems SI-8090JD Datasheet HTML 7Page - Allegro MicroSystems SI-8090JD Datasheet HTML 8Page - Allegro MicroSystems SI-8090JD Datasheet HTML 9Page - Allegro MicroSystems SI-8090JD Datasheet HTML 10Page - Allegro MicroSystems  
Zoom Inzoom in Zoom Outzoom out
 6 / 10 page
background image
SI-8090JD
Step-Down
to 9.0 V, 1.5 A,
DC/DC Converter
115 Northeast Cutoff, Box 15036
Worcester, Massachusetts 01615-0036
Switching
Regulators
6
Layout Guideline
APPLICATIONS INFORMATION (cont.)
Thermal Protection. Circuitry turns off the switching
transistor when the junction temperature rises above 150°C.
It is intended only to protect the device from failures due to
excessive junction temperatures and should not imply that
output short circuits or continuous overloads are permitted.
Heat Radiation and Reliability. The reliability of the
IC is directly related to the junction temperature (T
J) in its
operation. Accordingly, careful consideration should be
given to heat dissipation.
The inner frame on which the integrated circuit is mounted
is connected to the GND terminal (pin 3). Therefore, it is
very effective for heat radiation to enlarge the copper area
that is connected to the GND terminal. The graph illus-
trates the effect of the copper area on the junction-to-
ambient thermal resistance (RθJA).
The junction temperature (T
J) can be determined from
either of the following equations:
T
J = (PDR
θJA) + TA
or
T
J = (PDR
θJC) + TC
where P
D = VIII – VOIO – VFIO(1 – [VO/VI])
or the adjacent graph,
V
F = the Schottky diode forward voltage, and
RθJC =3°C/W.



Html Pages

1 2 3 4 5 6 7 8 9 10


데이터시트 다운로드

Go To PDF Page


링크 URL



ALLDATASHEET 가 귀하에 도움이 되셨나요?  [ DONATE ] 

Alldatasheet는?   |   광고문의   |   운영자에게 연락하기   |   개인정보취급방침   |   링크 투 데이터시트    |   링크교환   |   제조사별 검색
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com