MGSF3441XT3 datasheet(1/4 Pages) MOTOROLA

부품명	MGSF3441XT3

상세설명	Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors

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제조업체	MOTOROLA [Motorola, Inc]

홈페이지	http://www.freescale.com

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Motorola Small−Signal Transistors, FETs and Diodes Device Data

Preliminary Information

Low rDS(on) Small−Signal MOSFETs

TMOS Single P−Channel

Field Effect Transistors

Part of the GreenLine

™ Portfolio of devices with energy−

conserving traits.

These miniature surface mount MOSFETs utilize Motorola’s

High Cell Density, HDTMOS process. Low rDS(on) assures

minimal power loss and conserves energy, making this device

ideal for use in small power management circuitry. Typical

applications are dc−dc converters, power management in

portable and battery−powered products such as computers,

printers, PCMCIA cards, cellular and cordless telephones.

• Low rDS(on) Provides Higher Efficiency and Extends Battery Life

• Miniature TSOP 6 Surface Mount Package Saves Board Space

• Visit our Web Site at http://www.mot−sps.com/ospd

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

20

Vdc

Gate−to−Source Voltage — Continuous

VGS

± 8.0

Vdc

Drain Current — Continuous @ TA = 25°C

Drain Current — Pulsed Drain Current (tp ≤ 10 µs)

ID

IDM

1.5

20

A

Total Power Dissipation @ TA = 25°C

PD

950

mW

Operating and Storage Temperature Range

TJ, Tstg

− 55 to 150

°C

Thermal Resistance — Junction−to−Ambient

RθJA

132

°C/W

Maximum Lead Temperature for Soldering Purposes, for 10 seconds

TL

260

°C

ORDERING INFORMATION

Device

Reel Size

Tape Width

Quantity

MGSF3441XT1

7

″

8 mm embossed tape

3000

MGSF3441XT3

13

″

8 mm embossed tape

10,000

GreenLine is a trademark of Motorola, Inc.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Thermal Clad is a trademark of the Bergquist Company.

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MGSF3441XT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

CASE 318G−02, Style 1

TSOP 6 PLASTIC

MGSF3441XT1

P−CHANNEL

ENHANCEMENT−MODE

TMOS MOSFET

rDS(on) = 78 mΩ (TYP)

Motorola Preferred Device

D

G

D

S

™

DRAIN

3

GATE

SOURCE

4

6

5

2

1

REV 2

유사한 부품 번호 - MGSF3441XT3

제조업체	부품명	데이터시트	상세설명
Motorola, Inc	MGSF3441VT1	102Kb / 6P	TMOS Single P-channel Field Effect Transistors
VBsemi Electronics Co.,...	MGSF3441VT1G	439Kb / 9P	P-Channel 30-V (D-S) MOSFET
Motorola, Inc	MGSF3441VT3	102Kb / 6P	TMOS Single P-channel Field Effect Transistors

More results

유사한 설명 - MGSF3441XT3

제조업체	부품명	데이터시트	상세설명
NXP Semiconductors	J174	33Kb / 6P	P-channel silicon field-effect transistors April 1995
Motorola, Inc	MTM45N05E	1Mb / 6P	TMOS IV POWER FIELD EFFECT TRANSISTORS
	MTM50N05	224Kb / 6P	TMOS IV POWER FIELD EFFECT TRANSISTORS
	MMBF2201PT1	132Kb / 6P	LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
ON Semiconductor	MMDF4207	211Kb / 11P	Dual P-Channel Field Effect Transistors May, 2013 ??Rev. 3
	MGSF3442XT1	129Kb / 4P	Small-Signal MOSFETs Single N-Channel Field Effect Transistors May, 2013 ??Rev. 2
	MGSF3454XT1	156Kb / 6P	Small-Signal MOSFETs Single N-Channel Field Effect Transistors May, 2013 ??Rev. 1
	MGSF3455XT1	125Kb / 4P	Small-Signal MOSFETs Single P-Channel Field Effect Transistors May, 2013 ??Rev. 2
Motorola, Inc	MGSF3441VT1	102Kb / 6P	TMOS Single P-channel Field Effect Transistors
New Jersey Semi-Conduct...	J174	80Kb / 1P	P-channel silicon field-effect transistors

More results

MGSF3441XT3 데이터시트(PDF) 1 Page - Motorola, Inc

MGSF3441XT3 데이터시트(HTML) 1 Page - Motorola, Inc

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