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Document Number: 73541

S-52083–Rev. A, 10-Oct-05

Vishay Siliconix

SiP12201

New Product

Notes

a. Device mounted with all leads soldered or welded to PC board

b. Derate 14 mW/°C above + 85 °C

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only,

and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is

not implied. Exposure to absolute maximum rating/conditions for extended periods may affect device reliability.

ABSOLUTE MAXIMUM RATINGS

Parameter

Limit

Unit

29

V

BST to LX

6

FB, Comp/SD to GND

- 0.3 to 6

560

mW

Maximum Junction Temperature

125

°C

Storage Temperature

- 55 to + 150

RECOMMENDED OPERATING RANGE

Parameter

Limit

Unit

Input Voltage Range

4.2 to 26.0

V

Output Voltage Adjustment Range

0.6 to 5.5

Operating Temperature Range

- 40 to + 85

°C

Parameter

Symbol

Test Condition Unless Specified

Limits

-40 to 85°C

Unit

Controller

Input Voltage

4.2

26.0

V

Quiescent Current

Non switching

850

1250

µA

Internal Supply Voltage

4.8

5.5

V

Oscillator Frequency

400

500

600

kHz

Oscillator Ramp Amplitude

∆V

OSC

1

V

Max Duty Cycle

DC

87

93

%

Feedback Voltage

0.591

0.600

0.609

V

0.585

0.615

FB input Bias Current

100

nA

Transconductance

GM

2mA/V

Soft Start

4ms

Inputs and Outputs

SD Input Voltage

0.15

V

Shutdown Current

120

225

µA

MOSFET Drivers

Break-before-make time

10

ns

Highside Driver

Output Voltage

4.5

V

On resistance

8.7

13

Ω

2.3

3.6

Ω

Rise time

51

ns

Fall time

15