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ABSOLUTE MAXIMUM RATINGS

DISSIPATION RATINGS TABLE PER PACKAGE

THS4513

SLOS472 – AUGUST 2005

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated

circuits be handled with appropriate precautions. Failure to observe proper handling and installation

procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision

integrated circuits may be more susceptible to damage because very small parametric changes could

cause the device not to meet its published specifications.

PACKAGING/ORDERING INFORMATION

PACKAGED DEVICES

TEMPERATURE

SYMBOL

(RGT-16)

THS4513RGTT

–40

°C to 85°C

–

THS4513RGTR

(1)

This package is available taped and reeled. The R suffix standard quantity is 3000. The T suffix standard quantity is 250.

(2)

The exposed thermal pad is electrically isolated from all other pins.

over operating free-air temperature range (unless otherwise noted)

UNIT

Supply voltage

6 V

Input voltage

±VS

Differential input voltage

4 V

200 mA

Continuous power dissipation

See Dissipation Rating Table

Maximum junction temperature

150°C

Operating free-air temperature range

–40

°C to 85°C

Storage temperature range

–65

°C to 150°C

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

300

°C

HBM

2000

ESD ratings

CDM

1500

MM

100

(1)

The THS4513 incorporates a (QFN) exposed thermal pad on the underside of the chip. This acts as a heatsink and must be connected

to a thermally dissipative plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature

which could permanently damage the device. See TI technical brief SLMA002 and SLMA004 for more information about utilizing the

QFN thermally enhanced package.

POWER RATING

PACKAGE

θ

JC

θ

JA

RGT (16)

2.4

°C/W

39.5

°C/W

2.3 W

225 mW

2