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PJM2035PSA 데이터시트(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM2035PSA 데이터시트(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 6 page ![]() PJM2035PSA Silicon P-Channel Power MOSFET 1 / 6 www.pingjingsemi.com Revision:1. 0 Feb-2019 Features Low Gate Charge and RDS(on) ESD protected(HBM) up to 2KV Application Load switch and in PWM applicatopns D S G SOT-23 1. Gate 2.Source 3.Drain Marking: 2035K Schematic Diagram Absolute Maximum Ratings Ratings at TA=25℃ unless otherwise specified. Parameter Symbol Maximum Units Drain-Source Voltage -VDS 20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current -ID 4.9 A Power Dissipation PD 0.9 W Junction and Storage Temperature Range TJ, TSTG 150, -55 to 150 °C Thermal Characteristics Parameter Symbol Typ. Units Maximum Junction-to-Ambient RθJA 139 °C/W |
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