PJM3415PSA-4K datasheet(2/6 Pages) PJSEMI

2 / 6 page

PJM3415PSA-4K

Silicon P-Channel Power MOSFET

2 / 6

Electrical Characteristics (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Type

Max

Units

Static Characteristics

Drain-source breakdown voltage

-V(BR)DSS

VGS = 0V, ID=-250µA

Zero gate voltage drain current

-IDSS

VDS =-

20V,VGS = 0V

µA

Gate-body leakage current

IGSS

VGS=±

10V, VDS= 0V

µA

Gate threshold voltage Note2

-VGS(th)

VDS =VGS, ID =-250µA

Drain-source on-resistance Note2

RDS(on)

VGS =-4.5V, ID =-4A

mΩ

VGS =-2.5V, ID =-4A

VGS =-1.8V, ID =-2A

Forward tranconductance Note2

gFS

VDS =-5V, ID =-4A

Dynamic characteristics

Input Capacitance

Ciss

VDS =-10V,VGS =0V,f=1MHz

1450

Output Capacitance

Coss

205

Reverse Transfer Capacitance

Crss

160

Switching Characteristics

Turn-on delay time

td(on)

VDS=-10V, VGS=-4.5V RGEN =3Ω,

RL=2.5Ω,

9.5

Turn-on rise time

Turn-off delay time

td(off)

Turn-off fall time

Total gate charge

VDS =-10V,VGS =-4.5V,ID =-4A

17.2

Gate-source charge

Qgs

1.3

Gate-drain charge

Qgd

4.5

Source-Drain Diode characteristics

Diode Forward voltage Note1

-VDS

VGS =0V, IS=-1A

Notes:1.

Surface Mounted on FR4 Board, t ≤ 10 sec.

2.Pulse Test : Pulse width≦3 00µs, duty cycle≦2 %.

Notices:

The MOSFET is a static-sensitive component and has strict requirements on the production environment. It is

recommended to avoid static interference during storage and production. The temperature of the tin furnace or

reflow oven do not exceed 260 degrees.

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Revision：1.

1 Jul-2019

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