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PJM3422NSA 데이터시트(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

부품명 PJM3422NSA
상세설명  N- Enhancement Mode Field Effect Transistor
PDF  7 Pages
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제조업체  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
홈페이지  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM3422NSA 데이터시트(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd,

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PJM3422NSA
N- Enhancement Mode Field Effect Transistor
www.pingjingsemi.com
1 / 7
Revison：1.0 Apr-2019
Features
RDS (ON) = 125 mΩ(Typ.) @VGS = 4.5 V
Excellent RDS(on) and low gate charge
Application
This device is suitable for use as a load switch.
Absolute Maximum Ratings (TA=25℃ unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
55
V
Gate-Source Voltage
VGS
±12
V
Drain Current-Continuous
ID
2.1
A
Maximum Power Dissipation
PD
0.9
W
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
℃
Thermal Characteristics
Parameter
Symbol
Value
Units
Thermal Resistance,Junction-to-Ambient Note1
RθJA
139
℃ / W
SOT-23
1
2
Gate
Source
3Drain
Schematic diagram
1. Gate 2.Source 3.Drain
Marking: R22


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