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PSKT26/16 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited |
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PSKT26/16 데이터시트(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 PSKT26/16 Thyristor Modules FEATURES · High frequency operation · Low forward voltage drop · Planar passivated chips · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · induction heating · Motor control ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VRRM Repetitive Peak Reverse Voltage 1600 V VDRM Repetitive Peak Forward Blocking Voltage 1600 V IT(AV) Average Forward Current Sinewave,180°conduction,Tc=85℃ 25 A ITSM Peak, One-cycle, Non-repetitive Surge Current 8.3 msec (60Hz),sine 700 A Viso Isolated Voltage 2500 V TJ Junction Temperature -40~125 ℃ Tstg Storage Temperature Range -40~125 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case,Per Module 0.44 ℃ /W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX UNIT VTM Forward Voltage Drop ITM = 80 A,TJ = 25 ℃ 2 V IDRM IRRM Peak Reverse and Off-state Leakage Current VD= VDRM VR= VRRM,TJ = 125 ℃ 5 mA IGT DC gate current required to trigger VD= 6V,TJ = 25 ℃ 100 mA VGT DC gate voltage required to trigger 1.6 V |
유사한 부품 번호 - PSKT26/16 |
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유사한 설명 - PSKT26/16 |
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