RMB2F datasheet(1/2 Pages) CHENDA

부품명	RMB2F

상세설명	GLASS PASSIVATED FAST RECOVERY BRIDGE RECTIFIERS

PDF	2 Pages

Scroll/Zoom	100%

제조업체	CHENDA [Microdiode Semiconductor (Shenzhen) Co., Ltd]

홈페이지	http://www.microdiode.com/en

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1 / 2 page

GLASS PASSIVATED FAST RECOVERY BRIDGE RECTIFIERS

DN:T19807A0

https://www.microdiode.com

Rev:2019A0

Page :1

Voltage Range - 200 to 1000 Volts Current - 0.5/0.8 Ampere

RMB2F THRU RMB10F

Features

Maximum Ratings And Electrical Characteristics

Ratings at 25 °C ambient temperature unle ss otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Mechanical Data



Ideal for printed circuit board

Reliable low cost construction utilizing molded plastic technique

High temperature soldering guaranteed: 260°C /10 seconds at 5

lbs., (2.3kg) tension Small size, simple installation

Leads solderable per MIL-STD-202, Method 208

High surge current capability

Glass passivated chip junction

Green compound(halogen&Sb2O3 free)

Case : JEDEC MBF Molded plastic body

Terminals : Solder plated, solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Position: Any

Weight : 0.0026 ounce, 0.075 grams

MBF



MAX

Dimensions in inches and (millimeters)

Parameter

SYMBOLS

RMB2F

RMB4F

RMB6F

RMB8F

RMB10F

UNITS

Marking Code

MDD

RMB2F

MDD

RMB4F

MDD

RMB6F

MDD

RMB8F

MDD

RMB10F

Maximum repetitive peak reverse voltage

VRRM

200

400

600

80

1000

V

Maximum RMS voltage

VRMS

140

280

420

56

700

V

Maximum DC blocking voltage

VDC

200

400

600

80

1000

V

Maximum average forward rectified current

On glass-epoxy P.C.B.(Note1)

On aluminum substrate(Note2)

F(AV)

0.5

0.8

A

Peak forward surge current,

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

IFSM

30

A

Maximum instantaneous forward voltage drop

per leg at 0.4A

VF

1.3

V

Maximum DC reverse current

TA=25°C

at rated DC blocking voltage

TA=100°C

IR

5

500

uA

Maximum reverse recovery time

trr

150

250

200

ns

Typicalthermalresistance

RθJL

RθJA

30

88

°C/W

Operating temperature range

TJ

-55to+150

°C

storage temperature range

TSTG

-55to+150

°C

I

Note: 1. Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A.

2. Mountedon glass epoxy PC boardwith4

×1.5"×1.5"（3.81×3.81 cm）copper pad.



유사한 부품 번호 - RMB2F

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DIYI Electronic Technol...	RMB2F	2Mb / 3P	PHASE 0.8AMP FAST GLASS PASSIVATED BRIDGE RECTIFIER
Zibo Seno Electronic En...	RMB2F	88Kb / 2P	FAST RECOVERY SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
Microdiode Semiconducto...	RMB2F	292Kb / 2P	GLASS PASSIVATED FAST RECOVERY BRIDGE RECTIFIERS

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	RABS152	367Kb / 2P	GLASS PASSIVATED FAST RECOVERY BRIDGE RECTIFIERS
	RMB2F	292Kb / 2P	GLASS PASSIVATED FAST RECOVERY BRIDGE RECTIFIERS
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RMB2F 데이터시트(PDF) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

RMB2F 데이터시트(HTML) 1 Page - Microdiode Semiconductor (Shenzhen) Co., Ltd

유사한 부품 번호 - RMB2F

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