FTC1815 datasheet(1/2 Pages) FS

부품명	FTC1815

상세설명	General Purpose NPN Transistor

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제조업체	FS [First Silicon Co., Ltd]

홈페이지	http://www.firstsilicon.co.kr/

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1 / 2 page

General Purpose NPN Transistor

FEATURES

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

50

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

150

mA

PC

Collector Power Dissipation

400

mW

Tj

Junction Temperature

125

℃

Tstg

Storage Temperature

-55-125

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= 100uA, IE=0

60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 0. 1mA, IB=0

50

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100uA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 60V,IE=0

0.1

uA

Collector cut-off current

ICEO

VCE= 50V, IB=0

0.1

uA

Emitter cut-off current

IEBO

VEB=5V,IC=0

0.1

uA

DC current gain

hFE

VCE= 6 V, IC= 2mA

70

700

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB=10mA

0.25

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA, IB=10mA

1

V

Transition frequency

fT

VCE=10 V, IC= 1mA

f=30MHz

80

MHz

Collector Output Capacitance

Cob

VCB=10V,IE=0

f=1MHz

3.5

pF

Noise Figure

NF

VCE=6V,IC=0.1mA

f =1KHz,RG=10K

10

dB

CLASSIFICATION OF

hFE

Rank

L

B

R

G

Y

O

Range

70-140

120-240

200-400

350-700

SEMICONDUCTOR

TECHNICAL DATA

FTC1815

2009. 04. 20

1/2

Revision No : 0

TO-92

DIM

MILLIMETERS

A

B

C

D

F

G

H

J

L

4.70 MAX

4.80 MAX

3.70 MAX

1.00

1.27

0.85

0.45

14.00 0.50

2.30

D

1

2

3

B

G

H

F

E

C

E

0.51 MAX

M

+

_

0.55 MAX

1. EMITTER

2. COLLECTOR

3. BASE

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FTC1815 데이터시트(HTML) 1 Page - First Silicon Co., Ltd

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