BGA3012

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2013. All rights reserved.

Product data sheet

Rev. 3 — 26 September 2013

2 of 15

NXP Semiconductors

BGA3012

1 GHz 12 dB gain wideband amplifier MMIC

2.

Pinning information

[1]

This pin is DC-coupled and requires an external DC-blocking capacitor.

[2]

The center metal base of the SOT89 also functions as heatsink for the power amplifier.

3.

Ordering information

4.

Marking

5.

Limiting values

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1

RF_OUT and biasing

[1]

2GND

[2]

3RF_IN

[1]

321

sym130

2

1

3

Table 3.

Ordering information

Type number

Package

Name

Description

Version

BGA3012

-

plastic surface-mounted package; exposed die pad

for good heat transfer; 3 leads

SOT89

OM7858

EVB

1 GHz 12 dB gain wideband amplifier application

-

OM7862

EVB

5 MHz to 300 MHz 12 dB reverse amplifier application -

OM7866

EVB

40 MHz to 1006 MHz push-pull amplifier application

-

Table 4.

Marking codes

Type number

Marking code

Description

BGA3012

*6W

* = W : made in China

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

supply voltage

RF input AC coupled

0.6 +15

V

input power

single tone

-

20

dBm

storage temperature

65 +150 C

junction temperature

-

150

C

ambient temperature

40 +85

C

electrostatic discharge

voltage

Human Body Model (HBM);

According JEDEC standard 22-A114E

2-

kV

Charged Device Model (CDM);

According JEDEC standard 22-C101B

2-

kV