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DS20005537B-page 1

DN2625

Features

• Very Low Gate Threshold Voltage

• Designed to be Source-driven

• Low Switching Losses

• Low Effective Output Capacitance

• Designed for Inductive Loads

Applications

• Medical Ultrasound Beamforming

• Ultrasonic Array-focusing Transmitter

• Piezoelectric Transducer Waveform Drivers

• High-speed Arbitrary Waveform Generator

• Normally-on Switches

• Solid-state Relays

• Constant Current Sources

• Power Supply Circuits

General Description

The DN2625 is a low-threshold Depletion-mode

(normally-on) transistor that utilizes an advanced

vertical DMOS structure and a well-proven silicon gate

manufacturing process. This combination produces a

device with the power handling capabilities of bipolar

transistors as well as the high input impedance and

positive

temperature

coefficient

inherent

in

Metal-Oxide

Semiconductor

(MOS)

devices.

Characteristic of all MOS structures, this device is free

from

thermal

runaway

and

thermally

induced

secondary breakdown.

Vertical DMOS Field-Effect Transistors (FETs) are ide-

ally suited to a wide range of switching and amplifying

applications where high breakdown voltage, high input

impedance, low input capacitance and fast switching

speeds are desired.

The DN2625DK6-G contains two MOSFETs in an

8-lead, dual-pad DFN package. The DN2625 contains

a single MOSFET in a TO-252 D-PAK package.

Package Types

TO-252 D-PAK

(Top view)

GATE

SOURCE

DRAIN

See Table 3-1 and Table 3-2 for pin information.

8

1

2

3

4

7

6

5

S1

G1

D1

S2

G2

D1

D2

D2

D1

D2

8-lead DFN (Dual Pad)

(Top view)

N-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options