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DS20005705A-page 1

DN3525

Features

• High Input Impedance

• Low Input Capacitance

• Fast Switching Speeds

• Low On-Resistance

• Free from Secondary Breakdown

• Low Input and Output Leakage

Applications

• Normally-On Switches

• Solid-State Relays

•Converters

• Constant-Current Sources

• Power Supply Circuits

• Telecommunication Switches

General Description

The DN3525 is a low-threshold Depletion-mode

(normally-on) transistor that uses an advanced vertical

DMOS structure and a well-proven silicon gate

manufacturing process. This combination produces a

device with the power handling capabilities of bipolar

transistors and the high input impedance and positive

temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from

thermal

runaway

and

thermally

induced

secondary breakdown.

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where high breakdown voltage, high input impedance,

low input capacitance and fast switching speeds are

desired.

Package Type

See Table 3-1 for pin information.

GATE

SOURCE

DRAIN

DRAIN

3-lead SOT-89

(Top view)

N-Channel Depletion-Mode Vertical DMOS FET