2N7002 datasheet(3/14 Pages) MICROCHIP

3 / 14 page

AC ELECTRICAL CHARACTERISTICS

Electrical Specifications: TA = 25°C unless otherwise specified. (Note 2)

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

Forward Transconductance

GFS

—

mmho VDS = 25V, ID = 500 mA

Input Capacitance

CISS

—

VGS = 0V, 

VDS = 25V, 

f = 1 MHz

Common Source Output Capacitance

COSS

—

Reverse Transfer Capacitance

CRSS

—

Turn-On Time

t(ON)

—

VDD = 30V,

ID = 200 mA, 

RGEN = 25Ω

Turn-Off Time

t(OFF)

—

DIODE PARAMETER (Note 2)

Diode Forward Voltage Drop

VSD

—

1.2

—

VGS = 0V, ISD = 200 mA (Note 1)

Reverse Recovery Time

trr

—

400

—

VGS = 0V, ISD = 800 mA

Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated.



(Pulse test: 300 µs pulse, 2% duty cycle)

2: Specification is obtained by characterization and is not 100% tested.

TEMPERATURE SPECIFICATIONS

Parameter

Sym.

Min.

Typ.

Max.

Unit

Conditions

TEMPERATURE RANGE

Operating Ambient Temperature

–55

—

+150

°C

Storage Temperature

–55

—

+150

°C

PACKAGE THERMAL RESISTANCE

3-lead SOT-23

JA

—

203

—

°C/W

THERMAL CHARACTERISTICS

Package

ID (Note 1)

(Continuous)

(mA)

(Pulsed)

(mA)

Power Dissipation at

TA = 25°C

(W)

IDR (Note 1)

(mA)

IDRM

(mA)

3-lead SOT-23

115

800

0.36

115

800

Note 1: ID (continuous) is limited by maximum TJ.

 2018 Microchip Technology Inc.

DS20005797A-page 3

2N7002

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