MMG3003NT1 datasheet(4/17 Pages) NXP

4 / 17 page

RF Device Data

Freescale Semiconductor, Inc.

MMG3003NT1

50 OHM TYPICAL CHARACTERISTICS

5.8

VCC, COLLECTOR VOLTAGE (V)

Figure 8. Third Order Output Intercept Point

versus Collector Voltage

6.2

6.4

6.6

f = 900 MHz

100 kHz Tone Spacing

100

--40

--20

T, TEMPERATURE (_C)

Figure 9. Third Order Output Intercept Point

versus Case Temperature

VCC =6.2 Vdc

f = 900 MHz

100 kHz Tone Spacing

8 Vdc Supply with 10 Ω Dropping Resistor

Figure 10. Third Order Intermodulation Distortion

versus Output Power

Pout, OUTPUT POWER (dBm)

912

--80

--30

--50

--60

--70

--40

150

103

105

120

Figure 11. MTTF versus Junction Temperature

104

125

130

135

140

145

TJ, JUNCTION TEMPERATURE (C)

NOTE: The MTTF is calculated with VCC =6.2 Vdc, ICC = 180 mA

f, FREQUENCY (GHz)

Figure 12. Noise Figure versus Frequency

0.5

1.5

2.5

3.5

--70

--20

Pout, OUTPUT POWER (dBm)

Figure 13. Single--Carrier W--CDMA Adjacent

Channel Power Ratio versus Output Power

--30

--40

--50

--60

VCC =6.2 Vdc

f = 900 MHz

100 kHz Tone Spacing

VCC = 6.2 Vdc, f = 2140 MHz, C5 = 1.3 pF

Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth

Input Signal PAR = 8.5 dB @ 0.01% Probability(CCDF)

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