1812SMS-R10JLC datasheet(11/20 Pages) NXP

11 / 20 page

MRFX600H MRFX600HS MRFX600GS

RF Device Data

NXP Semiconductors

TYPICAL CHARACTERISTICS — 230 MHz, TC =25_C

PRODUCTION TEST FIXTURE

100 mA

VGS, GATE--SOURCE VOLTAGE (VOLTS)

Figure 11. Output Power versus Gate--Source

Voltage at a Constant Input Power

400

300

1.5

2.0

2.5

3.0

600

500

Pin =1.4 W

0.5

1.0

Pin, INPUT POWER (dBm) PEAK

230

610

677

(MHz)

P1dB

(W)

P3dB

(W)

Figure 12. Output Power versus Input Power

Pout, OUTPUT POWER (WATTS) PEAK

Figure 13. Power Gain and Drain Efficiency

versus Output Power and Quiescent Current

IDQ(A+B) = 400 mA

D

Gps

D

TC = –40_C

110

Pout, OUTPUT POWER (WATTS) PEAK

Figure 14. Power Gain and Drain Efficiency

versus Output Power

Pout, OUTPUT POWER (WATTS) PEAK

Figure 15. Power Gain versus Output Power

and Drain--Source Voltage

100

200

300

700

400

500

Gps

1000

40 V

3.5

85_C

25_C

–40_C

VDD = 65 Vdc, f = 230 MHz

Pulse Width = 100 sec, 20% Duty Cycle

VDD =65 Vdc,IDQ(A+B) = 100 mA, f = 230 MHz

Pulse Width = 100 sec, 20% Duty Cycle

VDD =65 Vdc,IDQ(A+B) = 100 mA, f = 230 MHz

Pulse Width = 100 sec, 20% Duty Cycle

100 mA

400 mA

300 mA

200

100

Pin =0.7 W

100

VDD = 65 Vdc, f = 230 MHz, Pulse Width = 100 sec, 20% Duty Cycle

300 mA

200 mA

100

85_C

600

700

800

VDD =30 V

50 V

55 V

60 V

65 V

IDQ(A+B) = 100 mA, f = 230 MHz

Pulse Width = 100 sec, 20% Duty Cycle

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