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2SD2163 데이터시트(PDF) 1 Page - Inchange Semiconductor Company Limited

부품명 2SD2163
상세설명  isc Silicon NPN Darlington Power Transistor
PDF  2 Pages
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제조업체  ISC [Inchange Semiconductor Company Limited]
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INCHANGE Semiconductor
isc website： www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Darlington Power Transistor
2SD2163
DESCRIPTION
·
High DC Current Gain-
: hFE = 1000(Min)@ IC= 10A
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Be ideal for direct driving from the IC output of devices
such as pulse motor drivers and relay drivers of PC terminals.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current- Continuous
1
A
PC
Collector Power Dissipation
30
W
Tj
Max.Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
4.2
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃
/W


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