VB2290 datasheet(4/9 Pages) VBSEMI

부품명	VB2290

상세설명	P-Channel 20 V (D-S) 175 째C MOSFET

PDF	9 Pages

Scroll/Zoom	100%

제조업체	VBSEMI [VBsemi Electronics Co.,Ltd]

홈페이지	www.VBsemi.com

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4 / 9 page

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

Source-Drain Diode Forward Voltage

Threshold Voltage

Drain Source Breakdown vs. Junction Temperature

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

100

125

150

175

ID =2.8 A

VGS =2.5 V

VGS =4.5 V

J - Junction Temperature (°C)

0.0

0.2

0.4

0.6

0.8

1.0

1234

TJ = 25 °C

TJ = 150 °C

GS - Gate-to-Source Voltage (V)

0.2

0.4

0.6

0.8

1.0

1.2

0.01

0.001

0.1

100

TJ = 25 °C

TJ = 150 °C

SD - Source-to-Drain Voltage (V)

- 0.2

- 0.1

0.1

0.2

0.3

0.4

0.5

- 50

- 25

100

125

150

175

ID =5mA

ID = 250 μA

J - Temperature (°C)

- 27

- 26

- 25

- 24

- 23

- 22

- 50

- 25

100

125

150

175

ID =1mA

J - Junction Temperature (°C)

VB2290

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