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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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VBMB1101M 데이터시트(PDF) 7 Page - VBsemi Electronics Co.,Ltd |
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VBMB1101M 데이터시트(HTML) 7 Page - VBsemi Electronics Co.,Ltd |
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7 / 8 page  Fig.14 - For N-Channel P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - + + + - - - * VGS = 5 V for logic level devices Peak Diode Recovery dV/dt Test Circuit VDD • dV/dt controlled by R G • Driver same type as D.U.T. • ISD controlled by duty factor "D" • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer RG VBMB1101M www.VBsemi.com 7 |
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