AP9971GI datasheet(2/8 Pages) VBSEMI

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-65

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-3.1

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

VDS Temperature Coefficient

ΔV

DS/TJ

Reference to 25 °C, ID = 1 mA

0.060

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

1.0

3.0

Gate-Source Leakage

IGSS

VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

µA

VDS = 48 V, VGS = 0 V, TJ = 150 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 18 Ab

0.027

Forward Transconductance

gfs

VDS = 25 V, ID = 18 Ab

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

1500

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Drain to Sink Capacitance

f = 1.0 MHz

Total Gate Charge

VGS = 10 V

ID = 52 A, VDS = 48 V,

see fig. 6 and 13b

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

VDD = 30 V, ID = 52 A,

RG = 9.1 Ω, RD= 0.54 Ω,

see fig. 10b

-19

Rise Time

120

Turn-Off Delay Time

td(off)

-55

Fall Time

-86

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

Internal Source Inductance

-7.5

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

Pulsed Diode Forward Currenta

ISM

120

Body Diode Voltage

VSD

TJ = 25 °C, IS = 30 A, VGS = 0 Vb

2.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 52 A, dI/dt = 100 A/µsb

140

300

Body Diode Reverse Recovery Charge

Qrr

-1.2

2.8

µC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

720

100

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