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DS280DF810ABVT 데이터시트(PDF) 8 Page - Texas Instruments |
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DS280DF810ABVT 데이터시트(HTML) 8 Page - Texas Instruments |
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8 / 51 page ![]() 8 DS280DF810 SNLS538A – SEPTEMBER 2016 – REVISED OCTOBER 2019 www.ti.com Product Folder Links: DS280DF810 Submit Documentation Feedback Copyright © 2016–2019, Texas Instruments Incorporated (1) Steps must be taken to ensure the combined AC plus DC supply noise meets the specified VDD supply voltage limits. (2) Steps must be taken to ensure the operating junction temperature range and ambient temperature stay-in-lock range (TEMPLOCK+, TEMPLOCK-) are met. Refer to Timing Requirements, Retimer Jitter Specifications for more details concerning TEMPLOCK+ and TEMPLOCK-. 7.3 Recommended Operating Conditions Over operating free-air temperature range (unless otherwise noted). MIN MAX UNIT VDD Supply voltage, VDD to GND. DC plus AC power should not exceed these limits. 2.375 2.625 V NVDD Supply noise, DC to < 50 Hz, sinusoidal(1) 250 mVpp NVDD Supply noise, 50 Hz to 10 MHz, sinusoidal(1) 20 mVpp NVDD Supply noise, >10 MHz, sinusoidal(1) 10 mVpp TrampVDD VDD supply ramp time, from 0 V to 2.375 V 150 μs TJ Operating junction temperature -40 110 ºC TA Operating ambient temperature -40 85(2) ºC VIO2.5V 2.5 V I/O voltage (LVCMOS, CMOS and Analog) 2.375 2.625 V VIO3.3V,INT_N Open Drain LVCMOS I/O voltage (INT_N) 3.6 V VIO3.3V Open Drain LVCMOS I/O voltage (SDA, SDC) 2.375 3.6 V (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. (2) No heat sink or airflow was assumed for these estimations. Depending on the application, a heat sink, faster airflow, or reduced ambient temperature (<85 C) may be required in order to meet the maximum junction temperature specification per the Recommended Operating Conditions. 7.4 Thermal Information THERMAL METRIC(1) CONDITIONS/ASSUMPTIONS(2) DS280DF810 UNIT FC/CSP (ABV) 135 PINS RθJA Junction-to-ambient thermal resistance 4-Layer JEDEC Board 26.4 °C/W 10-Layer 8-in x 6-in Board 9.3 20-Layer 8-in x 6-in Board 8.5 30-Layer 8-in x 6-in Board 8.2 RθJC(top) Junction-to-case (top) thermal resistance 4-Layer JEDEC Board 1.6 °C/W RθJB Junction-to-board thermal resistance 4-Layer JEDEC Board 9.3 °C/W ΨJT Junction-to-top characterization parameter 4-Layer JEDEC Board 0.1 °C/W 10-Layer 8-in x 6-in Board 0.1 20-Layer 8-in x 6-in Board 0.1 30-Layer 8-in x 6-in Board 0.1 ΨJB Junction-to-board characterization parameter 4-Layer JEDEC Board 9.3 °C/W 10-Layer 8-in x 6-in Board 5.0 20-Layer 8-in x 6-in Board 4.9 30-Layer 8-in x 6-in Board 4.6 7.5 Electrical Characteristics Over operating free-air temperature range (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Rbaud Input data rate Full-rate 20.2 28.4 Gbps Half-rate 10.1 14.2 Gbps Quarter-rate 5.05 7.1 Gbps |
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