PMT29EN datasheet(2/8 Pages) VBSEMI

2 / 8 page

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

0.5

1.5

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V

VDS = 30 V

μA

VGS = 0 V

VDS = 30 V, TJ = 125 °C

VGS = 0 V

VDS = 30 V, TJ = 175 °C

150

On-State Drain Currenta

ID(on)

VGS = 10 V

VDS5 V

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V

ID = 6 A

0.019



VGS = 4.5 V

ID = 4.9 A

0.021

VGS = 10 V

ID = 6 A, TJ = 125 °C

0.054

VGS = 10 V

ID = 6 A, TJ = 175 °C

0.064

Forward Transconductanceb

gfs

VDS = 15 V, ID = 5 A

-21

Dynamicb

Input Capacitance

Ciss

VGS = 0 V

VDS = 15 V, f = 1 MHz

295

Output Capacitance

Coss

-67

Reverse Transfer Capacitance

Crss

-25

Total Gate Chargec

VGS = 10 V

VDS = 15 V, ID = 6 A

-6

Gate-Source Chargec

Qgs

-1.2

Gate-Drain Chargec

Qgd

-1

Gate Resistance

f = 1 MHz

3.0

6.65



Turn-On Delay Timec

td(on)

VDD = 15 V, RL = 2.5 

ID  6 A, VGEN = 10 V, Rg = 1 

-6

Rise Timec

-12

Turn-Off Delay Timec

td(off)

-13

Fall Timec

-8

Source-Drain Diode Ratings and Characteristicsb

Pulsed Currenta

ISM

Forward Voltage

VSD

IF = 3 A, VGS = 0 V

-0.8

1.1

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