SSM3J36FS datasheet(2/8 Pages) VBSEMI

2 / 8 page

Notes

a. Pulse test; pulse width

≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = -250 μA

-20

VDS Temperature Coefficient

ΔVDS/TJ

ID = -250 μA

--12

mV/°C

VGS(th) Temperature Coefficient

ΔVGS(th)/TJ

-1.8

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 μA

-0.4

-1

Gate-Source Leakage

IGSS

VDS = 0 V, VGS = ± 8 V

± 30

μA

VDS = 0 V, VGS = ± 4.5 V

± 1

Zero Gate Voltage Drain Current

IDSS

VDS = -20 V, VGS = 0 V

-1

VDS = -20 V, VGS = 0 V, TJ = 85 °C

-10

On-State Drain Current a

ID(on)

VDS =

≥ 5 V, VGS = -4.5 V

-1.5

Drain-Source On-State Resistance a

RDS(on)

VGS = -4.5 V, ID = -0.4 A

0.450

VGS = -2.5 V, ID = -0.2 A

0.500

VGS = -1.8 V, ID = -0.1 A

0.600

Forward Transconductance

gfs

VDS = -10 V, ID = 0.4 A

Dynamic b

Input Capacitance

Ciss

VDS = -10 V, VGS = 0 V, f = 1 MHz

-45

Output Capacitance

Coss

-15

Reverse Transfer Capacitance

Crss

-10

Total Gate Charge

VDS = -10 V, VGS = -4.5 V, ID = -0.4 A

1.65

2.50

VDS = -0 V, VGS = -2.5 V, ID = -0.4

-1

Gate-Source Charge

Qgs

-0.2

Gate-Drain Charge

Qgd

-0.26

Gate Resistance

f = 1 MHz

2.4

Turn-On Delay Time

td(on)

VDD = -10 V, RL = 33.3

≅ -0.3 A, VGEN = -4.5 V, Rg = 1 Ω

-9

Rise Time

-10

Turn-Off DelayTime

td(off)

-10

Fall Time

-8

Turn-On Delay Time

td(on)

VDD = -10 V, RL = 33.3

≅ -0.3 A, VGEN = -8 V, Rg = 1 Ω

-1

Rise Time

-8

Turn-Off DelayTime

td(off)

-9

Fall Time

-5

Drain-Source Body Diode Characteristics

Pulse Diode Forward Current a

ISM

-1.5

Body Diode Voltage

VSD

IS = -0.3 A

-0.8

-1.2

Body Diode Reverse Recovery Time

trr

IF = -0.3 A, dI/dt = 100 A/μs

-16

Body Diode Reverse Recovery Charge

Qrr

Reverse Recovery Fall Time

-11

Reverse Recovery Rise Time

-5

SSM3J36FS

E-mail：China@VBsemi TEL:86-755-83251052

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