UT3N06G-AE3-R datasheet(1/9 Pages) VBSEMI

부품명	UT3N06G-AE3-R

상세설명	N-Channel 60-V (D-S) MOSFET

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제조업체	VBSEMI [VBsemi Electronics Co.,Ltd]

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N-Channel 60-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

•

TrenchFET® Power MOSFET

•

100 % Rg Tested

•

100 % UIS Tested

APPLICATIONS

•

Battery Switch

•

DC/DC Converter

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

60

0.0

85 at V

GS = 10 V

4.0

2.

1 nC

0.0

96 at V

GS = 4.5 V

3.8

G

S

D

Top View

2

3

TO-236

(SOT23)

1

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. Maximum under Steady State conditions is 1

20 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

4.0

A

TC = 70 °C

3.4

TA = 25 °C

3.

1b, c

TA = 70 °C

2.5b, c

Pulsed Drain Current

IDM

12

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.39

TA = 25 °C

0.91b, c

Avalanche Current

L = 0.1 mH

IAS

6

Single-Pulse Avalanche Energy

EAS

1.8

mJ

Maximum Power Dissipation

TC = 25 °C

PD

1.66

W

TC = 70 °C

1.06

TA = 25 °C

1.09b, c

TA = 70 °C

0.7b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

≤ 5 s

RthJA

90

115

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

60

75

S

N-Channel MOSFET

G

D

UT3N06G-AE3-R

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

1

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