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UT2302L-AE3-R 데이터시트(PDF) 4 Page - VBsemi Electronics Co.,Ltd

부품명 UT2302L-AE3-R
상세설명  N-Channel 20 V (D-S) MOSFET
PDF  9 Pages
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제조업체  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UT2302L-AE3-R 데이터시트(HTML) 4 Page - VBsemi Electronics Co.,Ltd

  UT2302L-AE3-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd UT2302L-AE3-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd UT2302L-AE3-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd UT2302L-AE3-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd UT2302L-AE3-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd UT2302L-AE3-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd UT2302L-AE3-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd UT2302L-AE3-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd UT2302L-AE3-R Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.1
1
10
100
0.0
0.3
0.6
0.9
1.2
TJ = 25 °C
TJ = 150 °C
VSD - Source-to-Drain Voltage (V)
0.1
0.3
0.5
0.7
0.9
- 50
- 25
0
25
50
75
100
125
150
ID = 250 μA
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.02
0.03
0.04
0.05
0.06
024
68
TJ =25 °C
ID =5A
TJ = 125 °C
VGS - Gate-to-Source Voltage (V)
0
8
16
24
32
0.001
0.01
0.1
1
10
100
Time (s)
Safe Operating Area, Junction-to-Ambient
100
1
0.1
1
10
100
0.01
10
0.1
TA = 25 °C
Single Pulse
100 ms
Limited by RDS(on)*
BVDSS Limited
1ms
100 μs
10 ms
1s,10s
DC
VDS - Drain-to-Source Voltage (V)
*V GS > minimum VGS at which RDS(on) is specified
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UT2302L-AE3-R
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