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UT9435G-TN3-R 데이터시트(PDF) 5 Page - VBsemi Electronics Co.,Ltd

부품명 UT9435G-TN3-R
상세설명  P-Channel 30-V (D-S) MOSFET
PDF  9 Pages
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제조업체  VBSEMI [VBsemi Electronics Co.,Ltd]
홈페이지  www.VBsemi.com
Logo VBSEMI - VBsemi Electronics Co.,Ltd

UT9435G-TN3-R 데이터시트(HTML) 5 Page - VBsemi Electronics Co.,Ltd

  UT9435G-TN3-R Datasheet HTML 1Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 2Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 3Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 4Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 5Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 6Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 7Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 8Page - VBsemi Electronics Co.,Ltd UT9435G-TN3-R Datasheet HTML 9Page - VBsemi Electronics Co.,Ltd  
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MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0.0
3.4
6.8
10.2
13.6
17.0
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Power, Junction-to-Foot
TC - Case Temperature (°C)
0.0
1.2
2.4
3.6
4.8
6.0
0
25
50
75
100
125
150
Power Derating, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0
25
50
75
100
125
150
TA - Ambient Temperature (°C)
E-mail：China@VBsemi TEL:86-755-83251052
www.VBsemi.tw
UT9435G-TN3-R
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