 2017 Microchip Technology Inc.

DS20005708A-page 1

TC2320

Features

• Low Threshold

• Low On-resistance

• Low Input Capacitance

• Fast Switching Speeds

• Free from Secondary Breakdown

• Low Input and Output Leakage

• Independent, Electrically Isolated N-channel and

P-channel

Applications

• Medical Ultrasound Transmitters

• High-voltage Pulsers

• Amplifiers

•Buffers

• Piezoelectric Transducer Drivers

• General Purpose Line Drivers

• Logic-level Interface

General Description

The TC2320 consists of a high-voltage, low-threshold

N-channel and P-channel MOSFET in an 8-Lead SOIC

package. This Enhancement-mode (normally-off)

transistor uses an advanced vertical DMOS structure

and a well-proven silicon gate manufacturing process.

This combination produces a device with the power

handling capabilities of bipolar transistors and high

input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally induced secondary breakdown.

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance

and fast switching speeds are desired.

Package Type

8-lead SOIC

See Table 2-1 for pin information.

(Top view)

DP

DP

DN

DN

GP

SP

GN

SN

N-Channel and P-Channel Enhancement-Mode Dual MOSFET