STM8319 datasheet(3/14 Pages) VBSEMI

3 / 14 page

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Dynamica

Turn-On Delay Time

td(on)

N-Channel

VDD = 20 V, RL = 3.7 Ω

ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω

P-Channel

VDD = - 20 V, RL = 2 Ω

ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω

N-Ch

P-Ch

Rise Time

N-Ch

P-Ch

Turn-Off Delay Time

td(off)

N-Ch

P-Ch

Fall Time

N-Ch

P-Ch

Turn-On Delay Time

td(on)

N-Channel

VDD = 20 V, RL = 3.7 Ω

ID ≅ 5.4 A, VGEN = 4.5 V, Rg = 1 Ω

P-Channel

VDD = - 20 V, RL = 2 Ω

ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω

N-Ch

P-Ch

Rise Time

N-Ch

P-Ch

Turn-Off Delay Time

td(off)

N-Ch

P-Ch

Fall Time

N-Ch

P-Ch

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

TC = 25 °C

N-Ch

2.6

P-Ch

- 2.6

Pulse Diode Forward Currenta

ISM

N-Ch

P-Ch

- 40

Body Diode Voltage

VSD

IS = 5.4 A

N-Ch

0.81

1.2

IS = - 2 A

P-Ch

- 0.77

- 1.2

Body Diode Reverse Recovery Time

trr

N-Channel

IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C

P-Channel

IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C

N-Ch

P-Ch

Body Diode Reverse Recovery Charge

Qrr

N-Ch

P-Ch

Reverse Recovery Fall Time

N-Ch

P-Ch

Reverse Recovery Rise Time

N-Ch

P-Ch

E-mail：China@VBsemi TEL:86-755-83251052

www.VBsemi.tw

STM8319

STM8319 데이터시트(PDF) 3 Page - VBsemi Electronics Co.,Ltd

STM8319 데이터시트(HTML) 3 Page - VBsemi Electronics Co.,Ltd

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14

데이터시트 다운로드

링크 URL