FTC2878 datasheet(1/2 Pages) FS

부품명	FTC2878

상세설명	High Emitter-Base Voltage

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제조업체	FS [First Silicon Co., Ltd]

홈페이지	http://www.firstsilicon.co.kr/

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2012. 01. 16

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SEMICONDUCTOR

TECHNICAL DATA

FTC2878

Revision No : 0

FTC2878

TRANSISTOR (NPN)

FEATURES

High Emitter-Base Voltage

Low on Resistance

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

15

V

IC

Collector Current -Continuous

0.3

A

PC

Collector Power Dissipation

0.4

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=10

μA,IE

0

5

0

=

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA,IB

0

2

0

=

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10

μA,IC

5

1

0

=

V

Collector cut-off current

ICBO

VCB=50V,IE 0

=

0.1

μA

Emitter cut-off current

IEBO

VEB=15V,IC 0

=

0.1

μA

DC current gain

hFE

VCE=2V,IC

0

2

A

m

4

=

1200

Collector-emitter saturation voltage

VCE(sat)

IC=30mA,IB

A

m

3

=

0.3

V

Base-emitter voltage

VBE(on)

VCE=2V,IC

A

m

4

=

0.71

V

Transition frequency

fT

VCE=6V,IC=4mA

30

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

7

pF

Turn-on time

ton

160

nS

Storage time

tS

500

nS

Fall time

tf

VCC=12V,IC=12mA,IB=1.2mA

130

nS

CLASSIFIC ATION OF hFE

Rank

B

A

Range

0

2

1

-

0

5

3

0

7

-

0

2

TO-92

1. EMITTER

2. COLLECTOR

3. BASE

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