FTC3202 datasheet(1/2 Pages) FS

부품명	FTC3202

상세설명	General Purpose Transistor

PDF	2 Pages

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제조업체	FS [First Silicon Co., Ltd]

홈페이지	http://www.firstsilicon.co.kr/

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1 / 2 page

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

35

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

500

mA

PC

Collector Power Dissipation

625

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS(Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-BASE breakdown voltage

V(BR)CBO

IC = 0.1mA, IB=0

35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC = 1mA, IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 0.1mA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 35V, IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1

μA

hFE(1)

VCE= 1V, IC= 100mA

70

400

DC current gain

hFE(2)

VCE= 6V, IC= 400mA

25

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB= 10mA

0.25

V

Base-Emitter Saturation Voltage

VBE

VCE=1V, IC= 100mA

1.0

V

Transition frequency

fT

VCE= 6V, IC= 20mA

300

MHz

Collector Output Capacitance

Cob

VCB= 6V, IE= 0,f=1 MHz

7.0

pF

CLASSIFICATION OF hFE

Rank

O

Y

GR

Range hFE(1)

70-140

120-240

Range hFE(2)

0

4

5

2

2010. 07. 22

1/2

Revision No : 0

SEMICONDUCTOR

TECHNICAL DATA

FTC3202

FEATURE

Complementary PNP Type available (FTA1270)

General Purpose Transistor

NPN Silicon

TO-92

DIM

MILLIMETERS

A

B

C

D

F

G

H

J

L

4.70 MAX

4.80 MAX

3.70 MAX

1.00

1.27

0.85

0.45

14.00 0.50

2.30

D

1

2

3

B

G

H

F

E

C

E

0.51 MAX

M

+

_

0.55 MAX

1. EMITTER

2. COLLECTOR

3. BASE

유사한 부품 번호 - FTC3202

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