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TPC6103 데이터시트(PDF) 5 Page - Toshiba Semiconductor

부품명 TPC6103
상세설명  Silicon P Channel MOS Type (U-MOS III)
PDF  7 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPC6103 데이터시트(HTML) 5 Page - Toshiba Semiconductor

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TPC6103
2004-07-06
5
Ambient temperature Ta (°C)
RDS (ON) – Ta
Drain-source voltage VDS (V)
IDR – VDS
Drain-source voltage VDS (V)
Capacitance – VDS
Ambient temperature Ta (°C)
Vth – Ta
Ambient temperature Ta (°C)
PD – Ta
Total gate charge Qg (nC)
Dynamic input/output characteristics
10
100
1000
10000
−0.1
−1
−10
−100
Crss
Coss
Ciss
Common source
Ta
= 25°C
f
= 1 MHz
VGS = 0 V
−0.3
−3
−30
30
300
3000
0
−0.5
−1.5
−2.0
−80
−40
0
40
80
160
Common source
VDS = −10 V
ID = −200 µA
Pulse test
120
−1.0
−1
−10
0
0.4
0.8
1.2
1.6
2.0
−100
Common source
Ta
= 25°C
Pulse test
−2.0
−1
VGS = 0 V
−4.5
−3
−30
−1.8
0
0
0.5
1
1.5
2
2.5
40
80
120
160
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
(1) t
= 5 s
(2) t
= 5 s
(1) DC
(2) DC
0
08
16
−4
−12
−20
0
−2
−6
−10
−8
24
32
40
−8
−16
−4
−5 V
VDD = −10 V
VGS
VDD = −10 V
−5
−2.5 V
Common source
ID = −6 A
Ta
= 25°C
Pulse test
−2.5 V
160
0
40
80
120
−80
−40
0
40
80
160
120
Common source
Pulse test
VGS = −1.8 V
ID = −1.1A
−2.2 A
ID = −1.1A
−4.5 A
−2.5 A
ID = −1.1 A, −2.2 A, −4.5 A
−2.5 V
−4.5 V



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