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FPD2000V 데이터시트(PDF) 2 Page - Filtronic Compound Semiconductors

부품명 FPD2000V
상세설명  2W POWER PHEMT
PDF  3 Pages
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제조업체  FILTRONIC [Filtronic Compound Semiconductors]
홈페이지  http://www.filtronic.co.uk/
Logo FILTRONIC - Filtronic Compound Semiconductors

FPD2000V 데이터시트(HTML) 2 Page - Filtronic Compound Semiconductors

  FPD2000V Datasheet HTML 1Page - Filtronic Compound Semiconductors FPD2000V Datasheet HTML 2Page - Filtronic Compound Semiconductors FPD2000V Datasheet HTML 3Page - Filtronic Compound Semiconductors  
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PRELIMINARY
FPD2000V
2W POWER PHEMT
Phone: +1 408 850-5790
http://www.filtronic.co.uk/semis
Revised: 4/29/05
Fax: +1 408 850-5766
Email: sales@filcsi.com
RECOMMENDED OPERATING BIAS CONDITIONS
Drain-Source Voltage:
From 5V to 10V
Quiescent Current:
From 25% IDSS to 55% IDSS
ABSOLUTE MAXIMUM RATINGS1
Parameter
Symbol
Test Conditions
Min
Max
Units
Drain-Source Voltage
VDS
-3V < VGS < +0V
12
V
Gate-Source Voltage
VGS
0V < VDS < +8V
-3
V
Drain-Source Current
IDS
For VDS > 2V
IDSS
mA
Gate Current
IG
Forward or reverse current
+15/-2
mA
RF Input Power2
PIN
Under any acceptable bias state
900
mW
Channel Operating Temperature
TCH
Under any acceptable bias state
175
ºC
Storage Temperature
TSTG
Non-Operating Storage
-40
150
ºC
Total Power Dissipation
PTOT
See De-Rating Note below
8.5
W
Gain Compression
Comp.
Under any bias conditions
5
dB
Simultaneous Combination of Limits3
2 or more Max. Limits
80
%
1TAmbient = 22°C unless otherwise noted
2Max. RF Input Limit must be further limited if input VSWR > 2.5:1
3Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes:
Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
Thermal Resitivity specification assumes a Au/Sn eutectic die attach onto a Au-plated copper heatsink or rib.
Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
Absolute Maximum Power Dissipation to be de-rated as follows above 22
°C:
PTOT= 8.5W – (0.056W/°C) x THS
where THS = heatsink or ambient temperature above 22°C
Example: For a 85
°C heatsink temperature: PTOT = 8.5W – (0.056 x (85 – 22)) = 4.9W
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. This product has be tested to Class 1A (> 250V but < 500V) using JESD22 A114, Human
Body Model, and to Class A, (< 200V) using JESD22 A115, Machine Model..
ASSEMBLY INSTRUCTIONS
The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere.
Stage
temperature should be 280-290
°C; maximum time at temperature is one minute. The recommended
wire bond method is thermo-compression wedge bonding with 1.0 mil (0.025 mm) gold wire. Stage
temperature should be 250-260
°C.



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