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TS9011ACT 데이터시트(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

부품명 TS9011ACT
상세설명  250mA CMOS Low Dropout Voltage Regulator
PDF  4 Pages
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제조업체  TSC [Taiwan Semiconductor Company, Ltd]
홈페이지  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TS9011ACT 데이터시트(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  TS9011ACT Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd TS9011ACT Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd TS9011ACT Datasheet HTML 3Page - Taiwan Semiconductor Company, Ltd TS9011ACT Datasheet HTML 4Page - Taiwan Semiconductor Company, Ltd  
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TS9011 series
2-4
2003/12 rev. D
Absolute Maximum Rating
Input Supply Voltage
Vin(max.)
+12
V
Input Operating Voltage
Vin(opr.)
+10
Output Current
Io
PD / (Vin – Vo)
V
Power Dissipation
SOT-23
SOT-89
TO-92
PD
0.15
0.50
0.65
W
Operating Junction Temperature Range
Tj
-40 ~ +125
oC
Storage Temperature Range
TSTG
-65 ~ +150
oC
Lead Soldering Temperature (260
oC)
10
S
Caution: Stress above the listed absolute rating may cause permanent damage to the device.
Electrical Characteristics
Ta = 25
oC unless otherwise specified.
Parameter
Conditions
Min
Typ
Max
Unit
TS90115
4.900
5.0
5.100
TS9011S
3.234
3.3
3.366
TS9011K
2.450
2.5
2.550
TS9011D
1.764
1.8
1.836
Output Voltage
Vin=Vo + 1V, Io
=40mA,
TS9011A
1.47
1.5
1.53
V
Maximum Output Current
Vin=Vo+1V,
250
--
--
mA
Input Stability
Vo+1V
≤ Vin ≤ Vo+2V, Io=1mA
--
0.2
0.3
%
TS90115
Vin=Vo+1V,
1mA
≤I
L≤100mA
TS9011S
--
40
80
TS9011K
TS9011D
Load Regulation (Note1)
Vin=Vo+1V,
1mA
≤I
L≤80mA
TS9011A
--
40
90
mV
Io=250mA
TS90115
--
400
600
Io=200mA
TS9011S
--
400
650
Io=160mA
TS9011K
--
400
700
Io=120mA
TS9011D
--
400
750
Dropout Voltage (Note 2)
Io=100mA
TS9011A
--
850
1000
mV
Quiescent Current
Vin=Vo+1V, Io=0A
--
2
5
uA
Output Current Limit
Vout < 0.4V
--
400
--
mA
Power Supply Rejection Ratio
At f=100KHz, Io=10mA,
--
30
--
dB
Output Voltage Temperature
Coefficient (Note 3)
--
100
--
ppm/
oC
Note: 1. Regulation is measured at constant junction temperature, using pulsed ON time.
2. Dropout is measured at constant junction temperature, using pulsed ON time, and the criterion is Vout inside
target value +/-2%.
3. Guaranteed by design.



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