TSD1760CPR datasheet(1/3 Pages) TSC

부품명	TSD1760CPR

상세설명	Low Vce(sat) NPN Transistor

PDF	3 Pages

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제조업체	TSC [Taiwan Semiconductor Company, Ltd]

홈페이지	http://www.taiwansemi.com

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TSD1760

1-1

2003/12 rev. A

TSD1760

Low Vce(sat) NPN Transistor

BVCEO = 30V

Ic = 3A

VCE (SAT), = 0.25V(typ.) @Ic / Ib = 2A / 0.2A

Features

Low VCE (SAT).

Excellent DC current gain characteristics

Structure

Epitaxial planar type.

Complementary to TSB1184

Ordering Information

Part No.

Packing

Package

TSD1760CP

Tape & Reel

TO-252

Absolute Maximum Rating (Ta = 25

oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Collector-Base Voltage

VCBO

40V

V

Collector-Emitter Voltage

VCEO

30V

V

Emitter-Base Voltage

VEBO

5

V

DC

3

Collector Current

Pulse

IC

7 (note 1)

A

Collector Power Dissipation

PD

1.0

W

Operating Junction Temperature

TJ

+150

oC

Operating Junction and Storage Temperature Range

TSTG

- 55 to +150

oC

Note: 1. Single pulse, Pw = 2mS

Electrical Characteristics

Ta = 25

oC unless otherwise noted

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Collector-Base Voltage

IC = 50uA, IE = 0

BVCBO

40

--

V

Collector-Emitter Breakdown Voltage

IC = 1mA, IB = 0

BVCEO

30

--

V

Emitter-Base Breakdown Voltage

IE = 50uA, IC = 0

BVEBO

5

--

V

Collector Cutoff Current

VCB = 40V, IE = 0

ICBO

--

1

uA

Emitter Cutoff Current

VEB = 4V, IC = 0

IEBO

--

1

uA

Collector-Emitter Saturation Voltage

IC / IB = 2.0A / 0.2A

VCE(SAT)

--

0.25

0.5

V

DC Current Transfer Ratio

VCE = 2V, IC = 1A

hFE

120

--

560

Transition Frequency

VCE = 5V, IC = 100mA,

f = 100MHz

fT

--

90

--

MHz

Output Capacitance

VCB = 10V, f=1MHz

Cob

45

--

pF

Note : pulse test: pulse width <=380uS, duty cycle <=2%

Classification Of hFE

Rank

Q

R

S

Range

120 - 270

180 - 390

270 - 560

Pin assignment:

1. Base

2. Collector

3. Emitter

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