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AM29LV033MU 데이터시트(PDF) 49 Page - Advanced Micro Devices

부품명 AM29LV033MU
상세설명  32 Megabit (4 M x 8-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
PDF  56 Pages
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제조업체  AMD [Advanced Micro Devices]
홈페이지  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29LV033MU 데이터시트(HTML) 49 Page - Advanced Micro Devices

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November 11, 2002
Am29LV033MU
49
ADV ANCE
I N FO RMAT I O N
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information. Write buffer program is typical per word.
3. For 1–32 bytes programmed.
4. Effective write buffer specification is based upon a 32-byte write buffer operation.
Parameter
Speed Options
JEDEC
Std.
Description
90R
101,
101R
112,
112R
120,
120R
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation
(Notes 2, 3)
Typ
100
µs
Effective Write Buffer Program Operation,
Per Byte (Notes 2, 4)
Typ
2.95
µs
Accelerated Effective Write Buffer Program
Operation, Per Byte (Notes 2, 4)
Typ
2.4
µs
Single Byte Program (Note 2)
Typ
100
µs
Accelerated Single Byte Programming
Operation (Note 2)
Typ
80
µs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
t
RH
RESET# High Time Before Write (Note 1)
Min
50
ns



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