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LP4935T1G 데이터시트(PDF) 1 Page - Leshan Radio Company

부품명 LP4935T1G
상세설명  P-Channel MOSFET Low RDS(on) trench technology.
PDF  5 Pages
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제조업체  LRC [Leshan Radio Company]
홈페이지  http://www.lrc.cn/
Logo LRC - Leshan Radio Company

LP4935T1G 데이터시트(HTML) 1 Page - Leshan Radio Company

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1. FEATURES
●
Low RDS(on) trench technology.
●
●
2. ORDERING INFORMATION
3. MAXIMUM RATINGS(Ta = 25ºC unless otherwise stated)
1.Surface Mounted on 1” x 1” FR4 Board.
2. Repetitive rating, pulse width limited by junction temperature.
3.The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
4. THERMAL CHARACTERISTICS
℃/W
Unit
Limits
50
RθJA
Continuous Drain Current
LP4935T1G
P-Channel MOSFET
Marking
Shipping
4935
4000/Tape&Reel
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
Device
LP4935T1G
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Req uirements
Drain−to−Source Voltage
VDSS
-30
V
Gate−to−Source Voltage
VGS
±20
V
Parameter
Symbol
Limits
Power Dissipation(Note 2)
Operating Junction Temperature and Storage Temperature Range
TJ , TSTG
−55 ~+150
W
Pulsed Drain Current (Note 3)
IDM
-30
℃
2.5
A
TA =25°C
-6.5
ID
TA =25°C
PD
TA =70°C
1.9
-5
TA =70°C
Typ
Parameter
Maximum Junction-to-Ambient(Note 1)
Symbol
Leshan Radio Company, LTD.
1/5
Top View
Unit
Rev.B Nov. 2019


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