HM12N02D datasheet(2/4 Pages) HMSEMI

2 / 4 page

T =25

unless otherwise specified

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC PARAMETERS

Drain-source breakdown voltage

V(BR)DSS

VGS = 0V, ID =250µA

Zero gate voltage drain current

IDSS

VDS =20V,VGS = 0V

Gate-body leakage current

IGSS

VGS =±10V, VDS = 0V

±100

Gate threshold voltage (note 3)

VGS(th)

VDS =VGS, ID =250µA

0.35

Drain-source on-resistance(note 3)

RDS(on)

VGS =4.5V, ID =9.7A

mΩ

VGS =2.5V, ID =9A

mΩ

VGS =1.8V, ID =8.1A

mΩ

VGS =1.5V, ID =4.5A

mΩ

VGS =1.2V, ID =2.4A

mΩ

Forward tranconductance(note 3)

gFS

VDS =4V, ID =9.7A

Diode forward voltage (note 3)

VSD

IS=10A, VGS = 0V

1.2

DYNAMIC PARAMETERS (note 4)

Input Capacitance

Ciss

VDS =4V,VGS =0V,f =1MHz

1800

Output Capacitance

Coss

650

Reverse Transfer Capacitance

Crss

450

Gate Resistance

f=1MHz

2.5

SWITCHING PARAMETERS (note 4)

Turn-on delay time

td(on)

VGEN=4.5V,VDD=4V,

ID=10A,Rg=1Ω

RL=0.4Ω

Turn-on rise time

Turn-off delay time

td(off)

100

Turn-off fall time

Total Gate Charge

VDS=4V,VGS=5V

ID=10A

Gate-Source Chage

Qgs

2.5

Gage-Drain Charge

Qgd

6.5

Notes :

1.Surface mounted on FR4 board using 1 square inch pad size,1oz copper.

2.Surface mounted on FR4 board using the minimum pad size,1oz copper.

3. Pulse test : Pulse width=300μs, duty cycle≤2%.

4. These parameters have no way to verify.

HM12N02D 데이터시트(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

HM12N02D 데이터시트(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

Html Pages

1 2 3 4

데이터시트 다운로드

링크 URL