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PJM02N60SA 데이터시트(PDF) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

부품명 PJM02N60SA
상세설명  N- Enhancement Mode Field Effect Transistor
PDF  7 Pages
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제조업체  PJSEMI [Dongguan Pingjingsemi Technology Co., Ltd,]
홈페이지  http://www.pingjingsemi.com/MainEn/Main.aspx
Logo PJSEMI - Dongguan Pingjingsemi Technology Co., Ltd,

PJM02N60SA 데이터시트(HTML) 2 Page - Dongguan Pingjingsemi Technology Co., Ltd,

  PJM02N60SA Datasheet HTML 1Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM02N60SA Datasheet HTML 2Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM02N60SA Datasheet HTML 3Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM02N60SA Datasheet HTML 4Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM02N60SA Datasheet HTML 5Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM02N60SA Datasheet HTML 6Page - Dongguan Pingjingsemi Technology Co., Ltd, PJM02N60SA Datasheet HTML 7Page - Dongguan Pingjingsemi Technology Co., Ltd,  
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Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Type
Max
Unit
S
tatic Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID =250µA
60
V
Zero Gate Voltage Drain Current
IDSS
VDS =60V,VGS = 0V
1
µA
Gate-Body Leakage Current
IGSS
VGS =±20V, VDS = 0V
±100
nA
Gate Threshold Voltage Note3
VGS(th)
VDS =VGS, ID =250µA
1
2
V
Drain-Source On-Resistance Note3
RDS(on)
VGS =10V, ID =3A
105
mΩ
VGS =4.5V, ID =2A
125
Forward Tranconductance Note3
gFS
VDS =15V, ID =2A
3
S
D
ynamic Characteristics
Input Capacitance
Ciss
VDS =30V,VGS =0V,f =1MHz
510
pF
Output Capacitance
Coss
34
Reverse Transfer Capacitance
Crss
26
SWITCHING
Characteristics
Total Gate Charge
Qg
VDS =30V,ID =3A,VGS=4.5V
7.5
nC
Gate-Source Charge
Qgs
1.4
Gate-Drain Charge
Qgd
3
Turn-On Delay Time
td(on)
VGS=10V,VDD=30V,ID =1.5A ,RG=1Ω
6
ns
Turn-On Rise Time
tr
15
Turn-Off Delay Time
td(off)
15
Turn-Off Fall Time
tf
10
Source-Drain Diode characteristics
Body Diode Voltage
VSD
IS=3A,VGS=0V
1.2
V
Notes :
1. Repetitive rating : Pulse width limited by junction temperature.
3. Pulse Test : Pulse Width≤300μs, Duty Cycle≤2%.
2 / 7
PJM02 60SA
N- Enhancement Mode Field Effect Transistor
1.3
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
www.pingjingsemi.com
Revision：2.0 May-2020



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