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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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PJM30P30DI 데이터시트(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM30P30DI 데이터시트(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 4 page  PJM30P30DI P-Channel Power MOSFET www.pingjingsemi.com 1 / 4 Revision：1.0 Dec-2018 Absolute Maximum Ratings Ratings at TC =25℃ unless otherwise specified. Parameter Symbol Maximum Units Drain-Source Voltage -VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current -ID 30 A Pulsed Drain Current Note1 -IDM 80 A Power Dissipation PD 35 W Junction and Storage Temperature Range TJ, TSTG 150, -55 to 150 °C Thermal Characteristics Parameter Symbol Typ. Units Maximum Junction-to-Case Note2 RθJC 3.57 °C/W ⚫ RDS(ON) = 11.5mΩ @ VGS=-10V (Typ.) ⚫ High density cell design for ultra low RDS(on) ⚫ Fully characterized avalanche voltage and current DFN3.3X3.3-8L Schematic Diagram Features Applications ⚫ Power switching application ⚫ Hard switched and high frequency circuits ⚫ Uninterruptible power supply S S S G D D D D 3 1 2 Gate Source Drain |
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