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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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PJM2302NSC 데이터시트(PDF) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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PJM2302NSC 데이터시트(HTML) 1 Page - Dongguan Pingjingsemi Technology Co., Ltd, |
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1 / 7 page  Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous ID 4 A Drain Current-Pulsed Note1 IDM 20 A Maximum Power Dissipation PD 1.25 W Operating Junction and Storage Temperature Range TJ,TSTG 150,-55 To 150 ℃ Thermal Resistance,Junction-to-Ambient Note2 RθJA 100 ℃ / W PJM2302NSC N- Enhancement Mode Field Effect Transistor 1 / 7 1 2 Gate Source 3Drain Applications Load switch and in PWM applications Power management Features VDS = 20V,ID = 4A RDS(ON) < 55mΩ @ VGS=2.5V RDS(ON) < 40mΩ @ VGS=4.5V Low Gate Charge and RDS(on) High power and current handing capability Schematic diagram Absolute Maximum Ratings Ratings at 25℃ ambient temperature unless otherwise specified. Thermal Characteristics www.pingjingsemi.com Revision：1.0 Jun-2019 1. Gate 2.Source 3.Drain Marking: Q2 SOT-23-3 2 1 3 |
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